1998 July 30
Philips Semiconductors Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
27
12.2 Read Characteristics
Unless otherwise specified, recommended operating conditions apply.
Voltage compliance for WDP
and WDN in current mode
CMM of the inputs
in current mode
1.5 Vcc -1.7 V
V
CCTL
V
CC
Fault Threshold Hysteresis=100mV +/- 10% 3.80 4.00 4.20 V
V
EETL
V
EE
Fault Threshold Hysteresis=100mV +/- 10% -4.20 -4.00 -3.80 V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
I
MR
MR Current Range SAL
GMR
4
3
8 10.2
6
mA
Pwr MR Power Range SAL
GMR
(Note 3)
1.500
0.375
4.2
1
9.25
2.30
mW
mW
MR Power Tolerance 3 < I
MR
< 10mA -5 +5 %
MR Bias Current Overshoot 0 %
RMR Digitizer Accuracy 5 %
V
Rext
Rext Reference Voltage 1.31 V
A
Vd
Differential Voltage Gain V
IN
= 1mV
PP
@ 20MHz,
R
Load
dif = 330 Ohm,I
MR
=8mA,
R
MR
= 66 Ohm,
RIN = 18 Ohm,
GAIN0=0, GAIN1=1,GMR=0
48 50 52 dB
f
HR
Passband Upper -3dB
Frequency
R
MR
= 66Ω;L
MR
=30nH
- 3dB. Without boost.
225
MHz
f
LR
Passband Lower -3dB
Frequency
R
MR
= 66Ω; L
MR
= 30nH;
LPF0=0
LPF1=1
3 MHz
IRNV Input referenced noise voltage
(including MR bias current noise,
excluding Rmr noise)
R
MR
= 66Ω; I
MR
=8mA
10 MHz<f<100 MHz, GMR=0
(Note 4)
0.8 nV/
÷sqrt
Hz
MR bias current noise I
MR
=8mA 10 MHz<f<100MHz
I
MR
=5mA 10 MHz<f<130MHz
8
5.7
pA/
sqrt÷
Hz
NF Noise figure (Note 5) 1.7 dB
HF noise +3dB frequency Preamp noise=head noise 350 MHz
LF noise +3dB frequency Preamp noise=head noise 3 MHz
