1998 July 30
Philips Semiconductors Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
4
3 QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
DC Supply voltage +4.5 +5 +5.5 V
V
EE
-4.5 -5 -5.5 V
NF Noise Figure Note 3, Section 14 1.7 1.7 dB
IRNV Input Referred Noise
Voltage
Rmr=66Ω; Imr=8mA;
10 MHz<f<100 MHz
0.8 nV/
sqrtHz
Avd Differential gain V
IN
=1mVpp @ 20 MHz,
R
Loaddif
=330Ω, Imr=8mA,
Rmr=66Ω,
GAIN0=0, GAIN1=1;
50 dB
f
HR
-3dB frequency bandwidth Rmr=66Ω, Lmr=30 nH
-3dB: without Boost SAL
GMR
225
225
MHz
MHz
CMR Common Mode Rejection Imr=8mA, Rmr=66Ω,
10MHz<f<200MHz
1 MHz<f< 10MHz
f<100 kHz, 1mV input signal
20
40
60
dB
dB
dB
PSR Power Supply Rejection 200mVpp on Vcc or Vee,
Imr=8mA, Rmr=66Ω,
10MHz<f<200MHz
1 MHz<f<10 MHz
f<100 kHz
20
40
60
dB
dB
dB
t
r
, t
f
Write Current Rise/Fall times
(-0.8 * Iwr => +0.8 * Iwr)
Iwr=50mA; f=20 MHz;
L
H
=75nH, R
H
=10Ω 0.84 ns
I
MR(PR)
Programming MR bias
current range
SAL
GMR (see note section 10)
4
3
10.2
6 .1
mA
mA
I
WR(b-p)
Programming Write current
range (base-to-peak)
Rext = 10 kΩ 10 50.3 mA
f
sclk
Serial interface clock rate 40 MHz
